发明名称 DRY-TYPE THIN FILM PROCESSING EQUIPMENT
摘要 PURPOSE:To reduce heat loss in a plasma generating chamber caused by a radio frequency current and improve the efficiency of plasma generation by a method wherein aluminum whose electrical conductivity is high is used as the material of the plasma generating chamber constituting a microwave resonator. CONSTITUTION:Aluminum is used as the material of a plasma generating chamber. As the electrical conductivity of aluminum is a fraction of that of stainless steel, heat loss caused by a radio frequency current in the wall of the plasma generating chamber is also a fraction of that of a stainless steel chamber so that the efficiency of the plasma generation can be improved with that heat loss reduction and the efficient thin film processing can be achieved. Although an active plasma beats the generating chamber wall when gas is introduced into the plasma generating chamber and a plasma is generated, as only a little impurity is contained in aluminum, the inside of a vessel and a substrate to be processed are hardly contaminated. With this constitution, at the time of etching and film forming, the excellent film processing can be realized and the performance of the processing equipment can be improved significantly.
申请公布号 JPS63221623(A) 申请公布日期 1988.09.14
申请号 JP19870055031 申请日期 1987.03.10
申请人 FUJITSU LTD;FUJI ELECTRIC CO LTD 发明人 TOKI MASAHIKO;OIWA KIYOSHI
分类号 H01L21/302;H01L21/205;H01L21/3065 主分类号 H01L21/302
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