发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable formation of a semiconductor device by a TAB method without modifying a tape width, by providing one semiconductor element with two sheets of insulating film.lead frames of TAB tapes and next arranging pad electrodes zigzag on the semiconductor element and performing bonding connections of pad electrodes with inner leads in the order of the outside arrangement and the inside arrangement. CONSTITUTION:A first insulating film.lead frame 6 is mounted on a semiconductor element 1, and bonding connections of pad electrodes 2a, 2b,... of outside arrangement with internal leads are respectively performed in an opening part 4a. A second insulating film.lead frame 8 is piled thereon so as to identify the opening parts 4a and 4b to each other, and bonding connections of pad electrodes 3a, 3b,... with the internal leads are performed. In this process, the insulating film.lead frame 8 is stuck so that a pattern formation surface for the internal leads is turned upward. Therefore, after the bonding process is completed, pad parts 7 for testing appear in the same direction as the upper surface of the semiconductor element 1.
申请公布号 JPS63221635(A) 申请公布日期 1988.09.14
申请号 JP19870055713 申请日期 1987.03.10
申请人 NEC CORP 发明人 HIRAYAMA NOBUKI
分类号 H01L23/50;H01L21/60 主分类号 H01L23/50
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