| 摘要 |
PURPOSE:To simplify a gate electrode structure and to obtain high performance characteristics by implanting an impurity of high dose to a semiconductor substrate, then covering it with a high melting point metal, and reetching the gate electrode to a region of small area. CONSTITUTION:A gate insulating film 2 is formed on a semiconductor substrate 1, a polysilicon layer is formed by a CVD method thereon, and a gate electrode 3 is formed by etching by an RIE method. Then, with the electrode 3 as a mask an impurity 4 of high dose is implanted by an ion implantation method, and the whole substrate 1 is covered with a high melting point metal layer 8. The layer 8 of the region except the electrode 8 is so removed by etching by an RIE method as to become smaller area than that of a gate electrode pattern, and with the layer 8 and the pattern of the electrode 3 as masks an impurity of low dose is implanted by an ion implantation method. A low concentration diffused layer 6 and a high concentration diffused layer 7 are formed by heat treating. Then, the width of the low concentration layer is varied at the drain and source sides to obtain high performance characteristics.
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