| 摘要 |
PURPOSE:To control temperature rising characteristics freely and improve the temperature stability by a method wherein a table on which a semiconductor substrate is placed in a lithography process and a light source which heats a resist layer on the semiconductor substrate placed on the table by radiation heating are provided. CONSTITUTION:An infrared radiation is applied to a wafer after exposure. By inputting the temperature rising characteristics of the wafer to a controller 5, the controller 5 controls the irradiation intensity of an infrared lamp 4. At that time, the temperature and illuminance are monitored by a temperature sensor 6 and an illuminance meter 7 and fed back to the controller 5 so as to perform feedback control for obtaining the optimum temperature rising process. The irradiation intensity of the infrared lamp 4 is controlled by the temperature sensor 6, the illuminance sensor 7 and the controller 5. If post- exposure baking is carried out in the above mentioned manner, the pattern of a resist layer with an excellent cross-sectional profile can be obtained in a developer. |
