| 摘要 |
PURPOSE:To form a transistor having a high speed, a high gm and a low power consumption by coupling two electrodes opposed through fine particles to the particles mainly by an electrostatic capacity to provide an electrode in which a current flowing by a tunnel effect can be controlled by a voltage applied to the electrode. CONSTITUTION:Electrodes 12, 13 are formed on a semiinsulating InP substrate 15. Fine particles 11 are formed by depositing platinum in size of 501 of thickness, the electrodes 12, 13 are formed by depositing platinum, and a distance between the electrodes 12 and 13 is 500Angstrom . An insulating film covered on the upper layer is a sputtered SiO2 film having 300Angstrom of thickness, a gate electrode 14 is formed on the insulating film 16, and made of platinum. Since the size of the particles 11 is very small, its capacity C is small and energy e<2>/2C is larger than thermal energy kT, electron exchange between the electrodes 12 and 12 is thermally impossible. Thus, a tunnel current flowing between the electrodes 12 and 13 can be controlled by a control voltage applied to the electrode 14. |
