| 摘要 |
PURPOSE:To obtain an Si single crystal thin film especially with hardly any impurities, by subjecting a substrate to etching in a discharge chamber and decomposing a mixed gas consisting of a silane, fluorosilane and H2 by discharge. CONSTITUTION:A substrate is etched with particularly preferably tetrafluorosi lane as an etching gas in a discharge chamber in which the substrate is charged. A mixed gas consisting of a silane, fluorosilane and H2 is subjected to discharge decomposition by utilizing high-frequency glow discharge or DC glow discharge to form an Si single crystal thin film on the etched substrate. The amount of the H2 based on the silane and fluorosilane in the above-mentioned mixed gas is preferably 5 times or more. Monosilane or disilane is effectively used as the silane and Si2F6 is effectively used as the fluorosilane. The interior of the discharge chamber is evacuated to <=10Torr and the substrate is heated to 100-400 deg.C to from the thin film of this invention.
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