| 摘要 |
PURPOSE:To enable etching selectively at a large etching rate by masking sections except a section to be etched of a semiconductor surface consisting of diamond with a metal or a metallic compound and selectively etching the section to be etched by using the plasma of oxygen or a reaction gas containing oxygen. CONSTITUTION:Sections except a section to be etched in a semiconductor surface composed of diamond are masked with a metal or a metallic compound, and the section to be etched is etched selectively by employing the plasma of oxygen or a reaction gas containing oxygen. The plasma of oxygen or the reaction gas including oxygen may be used as the etching method, and the etching method can be executed even by ion beam type etching, in which voltage is applied to the plasma and accelerated, besides plasma etching by parallel plate type electrode discharge employing DC or high frequencies. Accordingly, a diamond semiconductor element can be etched selectively at a large etching rate.
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