发明名称
摘要 PURPOSE:To provide an electrode for reaction which is stable in a soln. and has high efficiency by depositing thin iron oxide films of which the flat band potential is on a negative side on a substrate. CONSTITUTION:The thin iron oxide film of which the flat band potential at least at the boundary face with the soln. is on the negative side is deposited by vapor deposition, etc. on the substrate consisting of Si, etc. The multi-layered thin ion oxide films of which the band gaps are successively changed while the flat band potential is maintained on the negative side are deposited on the substrate. Such electrode is stable in the soln. and induces an electrochemical reaction when irradiated with light. The electrode has the high efficiency and can be produced at a low cost. The electrode is used for production of hydrogen and oxygen, etc. by electrolyzing water, etc. by making use of light energy of the solar light, etc.
申请公布号 JPS6346155(B2) 申请公布日期 1988.09.13
申请号 JP19850064850 申请日期 1985.03.28
申请人 FUTABA DENSHI KOGYO KK 发明人 MORIMOTO KYOSHI;TAKAGI TOSHINORI;MATSUBARA KAKUEI
分类号 H01M14/00;C25B1/00;C25B1/02;C25B5/00;C25B11/04;C25B11/06;H01L31/04 主分类号 H01M14/00
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