| 摘要 |
A heterojunction transistor has an acceptor doped superlattice base of sub-micron thickness, a composite emitter with a donor concentration adjacent the base, with a wider bandgap energy than the base, and with a low recombination velocity to minimize minority carrier diffusion and to set the divergence of emitter and base carrier velocities, and a collector configured like the emitter, permitting control and optimization of the cut-in voltage. The method for making the transistor includes forming the base, emitter, and collector by non-compensated, non-planar wafer processing techniques.
|
