发明名称 |
Using a rapid thermal process for manufacturing a wafer bonded soi semiconductor |
摘要 |
A method of forming a high quality silicon on insulator semiconductor device using wafer bonding. The annealing time for the wafer bonding process is substantially reduced through the use of a rapid thermal annealer, thereby resulting in minimizing the redistribution of the doping concentration resulting from the annealing process.
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申请公布号 |
US4771016(A) |
申请公布日期 |
1988.09.13 |
申请号 |
US19870042135 |
申请日期 |
1987.04.24 |
申请人 |
HARRIS CORPORATION |
发明人 |
BAJOR, GEORGE;RABY, JOSEPH S. |
分类号 |
H01L21/20;H01L21/762;(IPC1-7):H01L21/20;H01L21/76 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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