| 摘要 |
PURPOSE:To produce a high-density silicide target, by calcining a mixture of high-purity and high-m.p. metal powder and high-purity Si powder in a high vacuum, packing the calcined body as such in a sealed can, and sintering the body by a hot hydrostatic press. CONSTITUTION:High-purity and high-m.p. metal powder and high-purity Si powder are mixed, and the mixture is calcined in a high vacuum to form a silicide calcined body. The body is packed in the sealed can for compaction without being crushed. The inside of the can is evacuated and then sealed, and the body is sintered by a hot hydrostatic press. As a result, a high-m.p. metal silicide sputtering target to be used for the electrode material of a semiconductor device or a wiring material consisting of stoichiometrical MSi2 (M is metal), having a microstructure consisting of the metal having <=20mum max. particle diameter and free Si having <=50mum max. particle diameter, contg. <=200ppm oxygen, and having >=99% density ratio is obtained. |
