发明名称 FORMATION OF TRANSPARENT CONDUCTIVE FILM
摘要 PURPOSE:To stably form a transparent conductive film by preventing dendritic fracture, by forming a transparent conductive film on a substrate by sputtering and preventing an electric short circuit between a transparent conductive film in the course of formation and a jig holding a substrate. CONSTITUTION:The transparent conductive film 4 is formed on the substrate 1 held by the jig 2 by sputtering. The formation range 5 of the above transparent conductive film 4 is limited by the notch range 6 of the jig 2. In the above method, by supporting the substrate 1 on projecting substances 3 provided to the positions outside the above-mentioned formation range 5 on the jig 2, an electric short circuit between the transparent conductive film 4 in the course of formation and the jig 2 is prevented. In this way, the occurrence of a dendritic fracture phenomenon in the transparent conductive film 4 during sputtering can be prevented.
申请公布号 JPS63219568(A) 申请公布日期 1988.09.13
申请号 JP19870054550 申请日期 1987.03.10
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MORIHIRO MITSUHARU;FUJIWARA NORIO;FUJITA YOSUKE;ABE ATSUSHI
分类号 C23C14/08;C23C14/50 主分类号 C23C14/08
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