| 摘要 |
Sense amplifier for use in memory systems, particularly static random access memories (RAM). The sense amplifier circuitry comprises two inverters, one forming a regular amplifier, the other providing a reference voltage (VRef) to the amplifier for determining the optimal operating point (Ao) on the inverter's transfer curve, and to a bit line associated with a memory cell being read for biasing the line at its optimal operating level. The inverters used in the sense amplifier as voltage reference and as amplifier as well as the inverter pairs forming the memory cells may have similar structure and properties and can be formed on the same semiconductor chip.
|
