| 摘要 |
PURPOSE:To sputter-etching the sputtered particles deposited on an intermediate electrode at a low rate and improve the efficiency in forming a thin film, by using the intermediate electrode facing the magnetic field space between inner and outer targets as the cathode at a voltage lower than both targets. CONSTITUTION:The annular outside target 4a with the inner peripheral side facing a sputtering surface 12 as the sputtering surface 12a is arranged around the inside target 4 with the outer peripheral side as the sputtering surface 12. The magnetic field space 7 wherein plasma is produced when both targets 4 an 4a are sputtered is formed between both sputtering surfaces 12 and 12a. In the sputtering device of such a structure, the intermediate electrode 6 is provided on the rear sides of the targets 4 and 4a and opposed to the magnetic field space 7. In addition, the intermediate electrode 6 is used as the cathode at a voltage lower than both targets 4 an 4a, and sputter-etching is carried out at a rate lower than the rate at which the sputtered particles generated in the space 7 are deposited on the intermediate electrode 6. By this method, the deposition and absorption of the sputtered particles are prevented, and the efficiency in forming the specified thin film is improved.
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