| 摘要 |
PURPOSE:To obtain wirings with the narrower mutual intervals between wirings than the wiring width by a method wherein the wirings are formed by performing a reactive ion etching when metal wirings are formed on a ground insulating film provided with a semiconductor wafer and, at the same time, insulating walls are grown on the sides of the wirings, thereby insulating the mutually adjoining wirings. CONSTITUTION:An SiO2 film 12 to become a ground insulating film is coated on an Si substrate 11 and an Al film 13, which is used for metal wirings, is formed on the film 12 for providing resist films 14 with the prescribed pattern on the film 13. Then, a reactive ion etching is performed on the film 13 by using the films 14 as the mask for removing the exposed part of the film 13 and making metal wirings 13a remain under the films 14, and, at the same time, insulating walls 15 constituted with carbon are grown on both sides of the wirings 13a. At this time, since the height of the walls 15 is determined dependent upon the widths of the films 13 and 14, the height thereof is formed into the prescribed one in view of the above-mentioned fact. Subsequently, the intervals between the wirings 13a are filled up with Al wirings 13b through the walls 15 and the entire surfaces of the wirings 13a and 13b are protected with an insulating film 16. |
