发明名称 SEMICONDUCTOR LASER
摘要 PURPOSE:To continuously vary a light output by providing a ferrodielectric layer at least one of resonance surfaces of a laser, attaching a pair of electrodes thereon, and controlling the reflectivity with an external signal. CONSTITUTION:A ferrodielectric layer 9 such as, for example, Pb1-xLaxZr1-yTiy or the like is formed one of resonators 7, 8 in a known double hetero type semiconductor laser, electrodes 10, 11 are superposed, and extended to the side face of an oscillating layer 2. An electric field of a laser light generated from the resonance surfaces 7, 8 of the laser is extremely larger than the component of the junctions in parallel direction, in the lateral component of the layer 2. Accordingly, when a voltage is applied between the electrodes 10 and 11 in the laser light oscillation condition, the polarizing direction of the layer 9 becomes parallel to the voltage applying direction, i.e., parallel to the respective junctions, particularly the vertical component of the electric field of the laser light is fully reflected by the layer 9, and the ultrafine quantum efficiency on the surface 8 having no layer 9 is, on the contrary, enhanced. According to this structure, the light output of the laser generated from the resonance surfaces 7, 8 can be varied by applying the voltage between the electrodes 10 and 11.
申请公布号 JPS59115583(A) 申请公布日期 1984.07.04
申请号 JP19820225734 申请日期 1982.12.22
申请人 SANYO DENKI KK 发明人 HAMADA HIROYOSHI
分类号 H01S5/00;H01S3/105;H01S5/028 主分类号 H01S5/00
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