| 摘要 |
PURPOSE:To obtain the high efficiency of photoelectric conversion by a method wherein a first thinner intrinsic thin film is formed at a formation pressure which is higher than that which is used to form a second thicker intrinsic thin film. CONSTITUTION:This is a photoelectric conversion element where a first electrode, a first conductive thin film, a first thinner substantially intrinsic thin film 3, a second thicker substantially intrinsic thin film, a second conductive thin film and a second electrode are formed in this order on a substrate 10. The substantially intrinsic thin film is formed by plasma decomposition of a silane compound which is expressed by a general formula SinH2n+2 (where n is an integer of more than 1). The first thinner substantially intrinsic thin film is formed at a formation pressure which is higher than that which is used to form a second thicker substantially intrinsic thin film. By this setup, it is possible to obtain the photoelectric conversion element, with the high efficiency of photoelectric conversion, where a voltage at an open end is enhanced remarkably and a short-circuit photoelectric current and a curve factor are improved simultaneously.
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