| 摘要 |
PURPOSE:To obtain the excellent efficiency of photoelectric conversion by a method wherein a first thinner intrinsic thin film is formed by plasma decomposition of high-order silane and a second thicker intrinsic thin film is formed by plasma decomposition of monosilane. CONSTITUTION:At a photoelectric conversion element where a first electrode, a first conductive thin film, a first thinner substantially intrinsic thin film, a second thicker substantially intrinsic thin film, a second conductive thin film and a second electrode have been formed in this order on a substrate, the first thinner substantially intrinsic thin film is formed by plasma decomposition of high-order silane which is expressed by a general formula SinH2n+2 (where n is an integer of bigger than 2); the second thicker substantially intrinsic thin film is formed by plasma decomposition of monosilane. By this setup, it is possible to obtain the photoelectric conversion element, with the high efficiency of photoelectric conversion, where a voltage at an open end is enhanced remarkably and a short-circuit photoelectric current and a curve factor are improved simultaneously.
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