| 摘要 |
A semiconductor integrated circuit device which constitutes a dynamic RAM has an automatic refresh circuit that contains a refresh timer circuit. The refresh timer circuit has a program element such as a fuse element. The program element is programmed depending upon the data holding characteristics of the dynamic memory cells. Therefore, the refresh period is changed depending upon the characteristics of the dynamic memory cells. According to this construction, the refresh period changes and, as a result, any undesired refresh operation is prevented from being executed, making it possible to reduce the amount of electric power consumed by the circuit device.
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