| 摘要 |
PURPOSE:To improve yield and quality by injecting wash water from a pair of oppositely arranged nozzles and making wash water to collide and making a turbulent flow generated abut against the surface of a substrate to be washed positioned on the sides of the nozzles and washing the surface of the substrate. CONSTITUTION:A pair of nozzle 10, 10' are disposed oppositely, wash water is injected simultaneously from a pair of the nozzles and made to collide and a turbulent flow generated is made to abut against the surface of a wafer 11 positioned on the sides of the nozzles and the surface of the wafer is washed. When an electrode window for an EP memory element is washed, both wash water is made to collide and a turbulent flow is generated when wash water is injected from a pair of opposed nozzles 10, 10'. The turbulent flow represents a spiral vortex, etc., the direction of a water current made to collide by the positioning of the wafer 11 on the sides of the nozzles is changed to the side, and the water current collides with the surface of the wafer by a certain hydraulic pressure. Consequently, wash water in the fine deep electrode window 6 is exchangeed, and the inside of the window is washed. Accordingly, the yield and quality of an IC are improved.
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