| 摘要 |
PURPOSE:To simplify a semiconductor device manufacturing process by a method wherein a gate electrode is subjected to pyrogenic oxidation (oxidation by burning hydrogen) for the formation of a side wall layer on the sides of the gate electrode through an oxidation process wherein oxidation is accelerated when impurity concentration is properly selected. CONSTITUTION:A gate insulating film and a polycrystalline silicon layer are formed on the surface of a substrate 1 and ion implantation is so accomplished that the peak may be located at the middle of the polycrystalline silicon layer. The polycrystalline silicon layer is subjected to etching for the construction of a gate electrode 6, after which source.drain regions 8 and 9 low in impurity concentration are formed. A process follows wherein pyrogenic oxidation is accomplished, with the property being taken into account that the rate of oxidation is high at a portion where implanted ion concentration is at its peak, whereby a side wall layer 10 is formed of silicon oxide on the sides of the gate electrode 6. After this, high-concentration source.drain regions 11 and 12 are formed. In this way, an anisotropic etching process may be dispensed with and the side wall width may be controlled with more ease.
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