| 摘要 |
PURPOSE:To obtain a positive type resist having high sensitivity to high energy rays by consisting the resist of alkali soluble siloxane polymers, self decomposition type polymer as a dissolution inhibitor, and onium salts as the decomposition accelerator thereof. CONSTITUTION:This material contains the siloxane polymers expressed by the formulas I, II, the polymer contg. the repeating unit expressed by the general formula III, and >=1 kinds of the onium salts expressed by the formula R<4>N2<+> MXa<->, R<4>R<5>I<+>MXa<->, R<4>R<5>R<6>S<+>MXa<-> (R<4>-R<6> denote an arom. group or substd. arom. group; MXa denotes BF4, PF6, etc.). In the formulas I, II, X denotes, for example, a carboxyl group; R1-R3 denote a hydroxyl group, alkyl group, etc.; l-n denote 0 or positive integer. The resist material which has the high sensitivity and resolution to high energy rays and has high dry etching resistance is thereby obtd. |
