| 摘要 |
PURPOSE:To dispense with a light-shielding layer, realize a simplified structure, and reduce the number of manufacturing steps by a method wherein a semiconductor layer is formed of an amorphous silicon carbide a-Si1-xCx. with its carbon quantity not less than a specified value. CONSTITUTION:A source electrode 14 and drain electrode 15 are built directly on a substrate 11. A process follows wherein a semiconductor layer 19, built either of an amorphous silicon carbide a-Si1-xCx with its carbon quantity (x) not less than 0.1 or of the same doped with a group III element such as boron or a V group element such as phosphorus, is formed between the electrodes 14 and 15. In a device constructed as such, there is no need for a light-shielding layer because optical energy gap is large in the semiconductor layer 19. This method simplifies the device structure and reduces the number of steps in the manufacturing process.
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