| 摘要 |
<p>PURPOSE:To make the intensity of electric field even and strong and to suppress the unevenness of the range of voltage at the starting of operation by forming an electrode which has a spire to be an electron emitter in a clean surface at first, and then forming an insulating layer and another electrode, around a single core formed of a minute different sort of material as the center. CONSTITUTION:At the accumulation surface of a base body 1 which consists of an amorphous material such as SiO2, a core forming base 2 of a different sort of material such as Si or Si3N4 is formed, and around a single core as the center, a single crystal of an element such as Mo, W, or Si is grown up, and then an insulating layer 4 is formed on the surface of an electrode 3 with a spire and on the accumulation surface of the base body 1. Then, on the insulating layer 4, an electrode layer 5 of Mo, for example, is formed, and moreover, a photo-resist 6 is spread on the electrode layer 5 and exposed to open the upper part of the spire of the electrode 3. After that, an aperture 7 is made, the insulating layer 4 is etched selectively to arrange an aperture 8, and the spire of the electrode 3 is exposed. In such a way, the electrode 3 with the spire is composed with a single crystal which has little deformation, and the form of the electron emitter of the spire is made even. As a result, the intensity of the electric field is made even and strong, and the unevenness of the range of voltage at the starting of operation can be suppressed.</p> |
