| 摘要 |
PURPOSE:To make it possible to implant impurities evenly into the surface of a wafer by rotating a semiconductor wafer independently by a wafer fixing disk, and moving a platen main body up and down. CONSTITUTION:To a platen 1, a wafer fixing disk 2 is installed, and a semiconductor wafer 4 is fixed by wafer holders 3. The wafer fixing disk 2 is rotated at a high speed in the direction of the wafer fixing disk rotation 9 by a motor 5, and at the same time, the platen 1 is moved up and down in the up and down platen movement direction 6. The up and down movement speed level is changed to a low speed when the spot of the ion beams 8 strikes the outer periphery of the semiconductor wafer 4, and to a high speed when it strikes near the center. Therefore, the impurities can be implanted into the surface of the semiconductor wafer 4 evenly.
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