| 摘要 |
PURPOSE:To make it possible to easily form a fine opening part by a method wherein the surface of a semiconductor layer at a region other than that of the pattern of an oxidation-resistant film is oxidized to form an oxide layer and the opening part is formed in the semiconductor layer using the oxide layer. CONSTITUTION:A semiconductor layer 3 is formed on a substrate 10, an oxidation-resistant film 4 is formed on the layer 3, a resist layer 5 is formed on the film 4 and the film 4 is patterned. Then, the layer 5 is removed, the surface of the layer 3 at a region other than the pattern of the film 4 is oxidized to form an oxide layer 6 and the film 4 is removed. After that, an opening part 7 is formed in the layer 3 using the layer 6. That is, when the layer 6 is formed on the layer 3 using the film 4 as a mask, the film 4 is curved. Therefore, the width to be possessed by the layer 6 after the film 4 is removed becomes a width narrower than the initial width of the film 4 used as a mask. Thereby, to form easily the narrow and fine opening part becomes possible.
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