| 摘要 |
PURPOSE:To prevent the breakdown due to thermal expansion or thermal contraction from occurring by a method wherein at least lower flat plate bodies out of upper flat plate body and lower flat plate bodies respectively connected to an upper end part and a lower end part of a jig main body holding semiconductor wafers are perforated with a slit part. CONSTITUTION:The first and the second flat plate bodies 31, 32 and a coupling hollow cylindrical body 33 respectively reach openings 31a, 32a and an inner hollow part 33a while mutually communicating slit parts 31b, 32b and 33b are perforated through said bodies 31, 32 and 33. Then, specified quantity of semiconductor wafers to be heat treated are mounted on wafer holding grooves 23a of jig main body 20 in the lateral direction to insert a silicon carbide jig 10 for heat treatment of wafers from a lower opening 52a of a furnace core tube 52 of a vertical type heat treatment furnace 50. Next, the jig mounting base 51 is lifted up and then a lower flat plate body 30 is mounted on a jig mounting base 51. At this time, even if the lower flat plate body 30 is rapidly heated corresponding to the notable temperature gradient inside the furnace core tube 52 of vertical type processing furnace 50, the inner thermal stress can be absorbed and relieved. Through these procedures, any breakdown due to thermal shock and resultant expansion can be avoided.
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