| 摘要 |
PURPOSE:To maintain the thickness of a thin Al film of a fine pattern at the prescribed value or above and prevent imperfect contact, disconnection, etc., by subjecting a thin Al film formed on a semiconductor substrate with irregular surface to local heating in a vacuum tank by means of an electron beam. CONSTITUTION:The film thicknesses tB, tC of the side face and the bottom in a contact hole part tend to become thin as compared with the film thickness tA of a thin Al film adhering to the flat plane of a wafer. The above-mentioned wafer 6 is loaded on a heater 4 for preheating and placed in a vacuum tank 8, and then the inside of the vacuum tank 8 is held in a vacuum state and the thin Al film on the wafer 6 is grounded. Then, an electron beam 16 as a local heating source is emitted from a filament 12 by means of an electron gun 11, accelerated by an electrode plate 13, converged by an electron lens 15, and applied to the wafer 6 so as to heat this wafer 6. Local heating on the wafer 6 surface is successively shifted by means of an XY stage 2 so as to reflow the thin Al film. In this way, the thickness of the thin Al film can be maintained at the prescribed value or above.
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