| 摘要 |
PURPOSE:To conduct operation at high speed, and to increase density by using epitaxial growth layers selectively formed in source and drain regions and employing the combination of a substrate main-surface azimuth in which no facet is shaped at ends on the sides, where conductive channels in the epitaxiai growth regions are generated, and the direction of a gate electrode. CONSTITUTION:Epitaxial growth regions 13 represent semiconductor crystal regions positioned between two surfaces positioned among source and drain regions and a gate electrode through second insulator layers 4 by using epitaxial growth from at least a semiconductor crystal substrate exposed-surface. There is not facet in the upper surface of a region adjacent to a region in which at least a conductive channel is generated at that time, and the upper surface is made parallel with the main surface of a semiconductor crystal substrate 1. Consequently, uniform junction depth can be realized with excellent controllability, and a shallow junction can be shaped with superior yield. Accordingly, a semiconductor device, working speed of which is accelerated and density of which can be increased, is acquired.
|
