| 摘要 |
PURPOSE:To prevent a short circuit between leading-out electrodes by forming side walls consisting of an insulator to the second leading-out electrode and the side wall of a second insulating film prior to a pretreatment process. CONSTITUTION:Side walls 14 composed of an insulator are shaped to insulating films 4 and the side walls of a leading-out electrode 8 in the upper section of the insulating films 4 prior to pretreatment by an etchant. Consequently, the side etching of the insulating films 4 is prevented even through pretreatment by the etchant such as hydrofluoric acid (HF) group one prior to the silicide- forming process of the leading-out electrode. Accordingly, even when the surfaces of leading-out electrodes 3, 8 are converted into silicide in a postprocess, a short circuit between both electrodes 3, 8 due to the cubical expansion of the electrodes is prevented.
|
