| 摘要 |
PURPOSE:To prevent emission delay due to a pattern effect by increasing an applied bias in response to an integrating output from an integrating means by a bias applying means applying a bias to a semiconductor laser. CONSTITUTION:An integrating means consisting of a resistor R4 and a capacitor C1 integrates a control signal under the state, in which a switching element (a transistor Q1) for driving a laser is turned OFF, or the inversion signal of the control signal, and functions as application to a bias applying means of an integrating output at a level corresponding to the time when an OFF state continues. The bias applying means composed of transistors Q3, Q4 and resistors R2, R3 serves as the change of the bias of a semiconductor laser LD in response to the level of the integrating output. Consequently, when the state of extinction of the semiconductor laser LD continues, the bias applying means functions as the increase of the bias. Accordingly, emission delay due to a pattern effect does not appear in the semiconductor laser LD. |
