| 摘要 |
PURPOSE:To develop a novel VGe2 compound having the C 40 type crystal structure, by mixing the powder of high purity V and Ge at the specific ratios and bringing the powders into reaction with under high temp. and high pressure. CONSTITUTION:The high purity V powder and Ge powder are mixed in an N2 atmosphere in such a manner that the mole ratio of V:Ge is regulated to 1:1-1:3. Said mixed powder is brought into reaction under the conditions of >1Gpa pressure and 600-1,300 deg.C temp. The compound VGe2 having extremely stable electric resistivity for the change of the outer air, particularly for heat and atmosphere, having various uses as a superfine resistance material, resistance material for controlling electric current, etc. and having the C 40 type crystal structure can be obtd.
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