| 摘要 |
PURPOSE:To obtain an LDD transistor resisting against high voltage stress by forming a section not shaped under an insulator in the side wall of a gate electrode into the second diffusion region of at least one of source and drain regions. CONSTITUTION:Source and drain regions formed by a second conductivity type first diffusion region arranged brought into contact with a channel section and a second conductivity type second diffusion region being disposed brought into contact with the first diffusion region and having concentration higher than the first diffusion region are shaped. A section where there is no second diffusion region of at least one of these regions under an insulator in the side wall of a gate electrode 5 is formed. That is, the width L' of a low- concentration diffusion region near a drain is made larger than that L of the insulator existing on the side wall of a gate. Accordingly, even when high voltage is applied to a drain electrode, a high electric field is difficult to be applied to the end sections of the gate electrode 5.
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