| 摘要 |
PURPOSE:To obtain a pressure sensor with high reliability and to improve the yield of a silicon wafer by arranging conductors for a negative potential at borders of respective chip sizes on the wafer in a lattice shape. CONSTITUTION:A silicon cap 12 has grooves 13, 13', and 13'' for chip formation on one surface and also has a recessed part 18 for providing a reference vacuum chamber 14 on the other surface. The silicon wafer 1 and the silicon cap 12 are put one over the other by utilizing their matching marks and set in a vacuum container 10, which is evacuated and heated. Then the container is evacuated as specified and held at specific temperature and a power source 11 applies a positive voltage to an unfixed position 21 of the silicon cap 12 and a negative voltage to terminals 7 of conductive film wiring 6 arranged in the lattice shape to perform electrostatic joining. The silicon cap 12 is held entirely at the same potential and the sensor wafer 1 have negative-potential conductive film wiring 6 over four surfaces by chip sides, so a joining state substantially in chip units is obtained and the inside of the reference vacuum chamber 14 is held in the vacuum state. |
