| 摘要 |
PURPOSE:To selectively obtain the titled compound useful as an intermediate for a polysilane with a function as an electric conductor, photoresist, optical information memory material, etc., in high yield, by reacting chlorodisilanes with a methylmagnesium halide. CONSTITUTION:Dichlorosilanes expressed by the formula (Me represents methyl; lis 0-3; n is 0 or 1; provided that n is 0 when l is 0, n is 0 or 1 when l is 1, n is 0 or 1 when l is 2 and n is 0 when l is 3) is reacted with a methylmagnesium halide expressed by the formula MeMgX (X represents halogen atom) preferably in an aprotic solvent such as n-hexane, THF, benzene, etc., at 0-50 deg.C for 1-12hr to afford the aimed compound expressed by the formula Me3SiSiMeCl2.
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