| 摘要 |
PURPOSE:To increase a coupling area between a bump electrode and a metal wiring part on a substrate when a mounting operation is executed on the wiring substrate, by a method wherein the bump electrode formed by a plating method is brought into contact with a pad part of an electrode on a semiconductor device at a cross-shaped opening of an insulating protective film covering the electrode. CONSTITUTION:A bump electrode 6 formed by a plating method is brought into contact with a pad part 3 of an electrode on a semiconductor device 1 at a cross-shaped opening 7 of an insulating protective film 4 covering the electrode. For example, if the opening 7 of the insulating protective film 4, such as a silicon nitride film or the like, covering the pad part 3 of the aluminum electrode and an oxide film 2 is formed to be cross-shaped, four corners become upheaved at the circumference of a substratum metal layer 5 formed on them by evaporation and the bump electrode 6 formed by the plating method. By this setup, if this IC chip is mounted on a wiring substrate face down, it comes into contact with a metal wiring part on the substrate at a surface 61 which has become upheaved at the four corners of the bump electrode 6, and the connection becomes sure.
|
