| 摘要 |
PURPOSE:To reduce the percentage to cause a trouble such as the defective conductivity, the high resistance or the like of a wiring part in a semiconductor integrated circuit manufactured by using a master slice, by a method wherein an isoration insulating film in a region where a transistor is not used is removed and a new insulating layer is formed in the whole region of a substrate including said region. CONSTITUTION:When a semiconductor integrated circuit is manufactured by using a master slice which contains an insulating layer 10 formed in such a way to cover transistors Q1, Q2 formed on a semiconductor substrate 1, the most part of the thick insulating layer 10 is removed, and a region 100 where transistors are used to form a desired semiconductor integrated circuit is masked selectively by using a resist 20. Then, the remaining insulating layer in the region which has not been masked by the resist 20 is removed; an isolating film 7 to isolate the transistor Q2 in the unmasked region is removed. Then, after the resist 20 has been removed, a second insulating lager 12 is formed in the whole region where at least the insulating layer 10 has been formed.
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