| 摘要 |
PURPOSE:To enhance the dampproofness of a wire bonding part by a method wherein an aluminum oxide layer is formed on the exposed surface of a wire- bonded aluminum pad by using a dry oxidation method so that a thick oxide film can be formed without a bad influence in a PSG film. CONSTITUTION:A semiconductor chip is mounted on a lead frame; an aluminum pad 2 of the semiconductor chip is wire-bonded; after that, an aluminum oxide layer 5 is formed on the exposed surface of the aluminum pad 2 by using a dry oxidation method. For example, a gold wire 3 is wire-bonded to the aluminum pad 2 on a PSG film 1 covering the surface of the semiconductor chip; after that, the exposed part of the aluminum pad 2 is oxidized by ozone gas 4; aluminum oxide 5 is formed. During this process, the ozone gas 4 is generated after oxygen gas 6 has been introduced to the surface of the semiconductor chip and has been irradiated with ultraviolet rays 7; the ozone oxidation is executed at atmospheric pressure and at a temperature of 350 deg.C. After that, the semiconductor chip is sealed by using a resin and a semiconductor device is completed. |
