发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
A stacked semiconductor IC device is disclosed which comprises a single-crystalline semiconductor substrate having planar surfaces with different height and a slant surface, a single-crystalline semiconductive layer which is epitaxially grown from the substrate on or above the substrate, and which has planar surfaces with different height and a slant surface and a substantially uniform thickness, groups of semiconductor elements each formed on the low planar surface of the substrate and on the low planar surface of the layer, and contact wiring pattern passing through the slant portion of the layer to electrically connect the element groups. |
申请公布号 |
DE3278873(D1) |
申请公布日期 |
1988.09.08 |
申请号 |
DE19823278873 |
申请日期 |
1982.08.30 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIBATA, KENJI;INOUE, TOMOYASU |
分类号 |
H01L27/00;H01L21/20;H01L21/822;H01L23/528;H01L27/06;H01L29/165;H01L29/267;(IPC1-7):H01L27/06 |
主分类号 |
H01L27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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