发明名称 |
SEMICONDUCTOR MEMORY DEVICES |
摘要 |
A metal-insulator semiconductor dynamic memory device including sense amplifiers arrayed on a semiconductor substrate and divided into a plurality of sense amplifier groups. Column decoders are provided, one decoder for each sense amplifier group, each sense amplifier group being selected by the column decoder. One or more control signal lines for simultaneously selecting the output signals of at least two sense amplifiers in the sense amplifier group selected by the column decoder, a plurality of data buses for transferring the output signals of at least two sense amplifiers selected by one or more control signal lines, are included in the memory device. All of the sense amplifiers have the control signal lines and the data buses in common. |
申请公布号 |
DE3278865(D1) |
申请公布日期 |
1988.09.08 |
申请号 |
DE19823278865 |
申请日期 |
1982.11.05 |
申请人 |
FUJITSU LIMITED |
发明人 |
NOZAKI, SHIGEKI;TAKEMAE, YOSHIHIRO;NAKANO, TOMIO |
分类号 |
G11C11/419;G11C11/34;G11C11/401;G11C11/408;G11C11/4096;(IPC1-7):G11C11/24 |
主分类号 |
G11C11/419 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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