发明名称 CHEMICAL COMPOUND OF INALZN3O6 WITH HEXAGONAL SYSTEM LAYER STRUCTURE
摘要 PURPOSE:To produce the title compound which is useful for optically functional materials, semi-conductor materials and catalyst materials by heating a mixture of In or its compound. Al or its compound and Zn or its compound in an oxidative or reductive atmosphere. CONSTITUTION:(A) Metallic In, In2O3 or a compound which is decomposed into In2O3 by heating, (B) metallic Al, Al2O3 or a compound which is decomposed into Al2O3 by heating and (C) metallic Zn, ZnO or a compound which is decomposed into ZnO by heating are mixed in the presence of an alcohol or acetone at an atomic ratio of In-Al-Zn 1:1:3. Then, the mixture is heated over 600 deg.C above several hours in air, in an oxidative atmosphere or a reductive atmosphere where In, Al and Zn are not reduced from trivalent (In, Al) and divalent (Zn)states respectively. Then, the mixture is rapidly cooled down to give the objective compound of InAlZn3O6 with the hexagonal system layer structure.
申请公布号 JPS63215518(A) 申请公布日期 1988.09.08
申请号 JP19870045670 申请日期 1987.02.27
申请人 NATL INST FOR RES IN INORG MATER 发明人 KIMIZUKA NOBORU;MORI NAOHIKO
分类号 C01G15/00 主分类号 C01G15/00
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