DYNAMIC SEMICONDUCTOR MEMORY DEVICE

摘要

A dynamic semiconductor memory device includes two bit lines connected to a sense amplifier and an active restore circuit which is formed from bit line pull-up transistors, each of which is connected between a bit line connected to the sense amplifier and a high potential source. In the active restore circuit, after the sense amplifier is actuated, the bit line pull-up transistor connected to the bit line on the high potential side is turned on by supplying a control signal to a gate so that the bit line is pulled up to a high voltage potential. The control signal is maintained at a voltage potential lower than the ground level from the time of actuation of the word line to the time of actuation of the sense amplifier.