| 摘要 |
PURPOSE:To obtain a pattern forming material effective in the fine working of a stepped substrate and having resistance to reactive ion etching (RIE) with oxygen by incorporating a photo-cross-linking agent soluble in an org. solvent into a copolymer consisting of specified structural units and conjugated diene units. CONSTITUTION:This pattern forming material contains a copolymer consisting of structural units represented by formula I (where each of R1-R4 may be the same or different with each other, and is H or alkyl group and conjugated diene units, and a photo-cross-linking agent soluble in an org. solvent. The structural units represented by the formula I may be units derived from p- dimethylsilylstyrene, p-trimethylsilylstyrene, m-dimethylsilylstyrene, m-trimethy lsilylstyrene, p-diethylsilylstyrene, p-dimethylsilylphenylisopropyl, p- trimethylsilylphenylisopropyl or m-dimethylsilylphenylisopropyl. The pattern forming material is effective in the fine working of a stepped substrate and has superior resistance to RIE with oxygen. |
