| 摘要 |
PURPOSE:To shorten a production process by a method wherein the connection between wiring layers is executed by using a wiring connection body coated on a through hole which has been made by exposing the side of the wring layers so that the through hole at a multilayer interconnection can be made by only one process. CONSTITUTION:The connection between wiring layers 3a-3c at a laminated structure formed by piling up insulating films 4a-4c where the wiring layers 3a-3c are buried, on a semiconductor substrate 1 is executed by using a wiring connection body 7 coated on a through hole 6 which has been made by exposing the side of the wiring layers 3a-3c to be connected. For example, the through hole 6 is made at the insulating films 4a-4c by an anisotropic dry etching method or the like so that the side of the wiring parts 3a-3c at the first to the third layers can be exposed. A Ti layer 7a and a Pt layer 7b are formed one after another as the wiring connection body 7 on the inside wall of the through hole 6 by a sputtering method; furthermore, an Au layer 7c is formed on the Pt layer 7b by a plating method; the wiring parts 3a-3c at the first to the third layers are connected electrically to one anther by using the wiring connection body 7.
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