| 摘要 |
PURPOSE:To form a good quality film while reducing ion bombardment, by dividing a plasma forming chamber into a low electric field strength chamber and a high electric field strength chamber and supplying reactive gas to a specimen chamber through the low electric field strength chamber. CONSTITUTION:When a microwave is supplied into a plasma forming chamber 14 through a dielectric coated line 2, the Ar-gas supplied to the chamber A0 of the plasma forming chamber 14 is excited by a high electric field. The reactive gas supplied into a chamber A1 is lightly excited but is not formed into plasma and, according to the pressure difference between the chambers A0, A1 and a specimen treatment chamber 15, said gas is led out to the specimen treatment chamber 15 through the communication ports 13a, 13b of a partition wall 13 and reaches the surface of a specimen 16 to form a film through gaseous phase reaction. Therefore, no reactive gas is present in the chamber A0 and the film is not formed in said chamber A0, with the result in that the generation of plasma is stably kept. |
