| 摘要 |
<p>PCT No. PCT/FR85/00066 Sec. 371 Date Nov. 15, 1985 Sec. 102(e) Date Nov. 15, 1985 PCT Filed Mar. 29, 1985 PCT Pub. No. WO85/04516 PCT Pub. Date Oct. 10, 1985.This process consists of producing a mask on a silicon substrate for defining the locations of the isolation zones to be formed, doping the unmasked substrate regions, thermally oxidizing said substrate regions, forming a trench in each oxidized region of the substrate and in the regions of substrate located beneath said oxidized regions thermally oxidizing the edges of the trenches, filling the trenches with an isolating dielectric and eliminating the mask.</p> |
