INSULATED GATE TYPE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME

摘要

A semiconductor device has an insulated gate type transistor. The insulated gate type transistor is formed on an insulating surface (5) of substrate (4). The insulated gate type transistor is formed in a single crystal layer (8) which is grown from a single nucleus (6) formed on nucleation region which is provided on said insulating surface (5), which has sufficiently greater nucleation density than material of said insulating surface and which has sufficiently small size so that only one nucleus can be grown.