IMPROVED ION-IMPLANTED GaAs FIELD-EFFECT TRANSISTOR

摘要

An improved performance semiconductor device fabricated by ion implanting GaAs substrates having a (211) crystallographic orientation is disclosed. More specifically, a semiconductor device according to the present invention comprises a semi-insulating GaAs single crystalline substrate having a planar surface lying substantially parallel to a (211) crystalline plane and having an active layer formed in the surface of the GaAs substrate by ion implantation.