| 摘要 |
PURPOSE:To make the miniaturization of a contact hole easy, by making the metal wiring width in a contact hole part smaller than the dimension of the contact hole in the process from contact part formation to metal wiring formation. CONSTITUTION:On an insulating film 2 on a substrate, a mask for making a contact hole is formed by using a photoresist film 3a. After the resist film 3a is eliminated, a metal wiring material film 4 is deposited, which is subjected to patterning by using a photoresist 3c. In this case, exposure and development are performed by using a mask wherein the mask width B owing to the resist 3c is smaller than the dimension A of the contact hole. As the resist film 3c in the contact hole is left without being exposed and developed, the metal wiring material film 4 in the contact hole is covered by the resist film 3c, and is not subjected to etching. After that, the resist 3c is eliminated, and then a form is obtained wherein a protrusion is not generated in a margine part of the metal wiring for the contact hole.
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