| 摘要 |
PURPOSE:To prevent destruction of aluminium interconnection or blisters of insulation films, by performing heat treatment of a plasma chemical vapor phase deposit film at a temperature lower than a temperature at which hydrogen is eliminated from the plasma chemical vapor phase deposit film. CONSTITUTION:A PSG film 2 is deposited on a P-type silicon substrate 1 by means of constant-pressure CVD process. An aluminium film 3 is then adhered thereon by means of magnetron sputtering and, subsequently, a tungsten silicide film 4 is sputtered. They are then patterned by means of photolithography. The wafer is then introduced into a furnace at 450 deg.C containing mixture of nitrogen and hydrogen, where it is alloyed and then a plasma nitride film 5 is formed. A through hole is formed by dry etching the plasma nitride film 5 by means of photolithography using mixed gas of fleon and oxygen, and a second aluminium interconnection layer 6 is formed. The aluminium interconnection layer 6 is then alloyed in a nitrogen furnace at 400 deg.C so as to obtain connection between the first and second interconnections. As a result, elimination of hydrogen from the plasma nitride film can be prevented, and therefore blisters of plasma or loss of aluminium interconnections can be avoided.
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